onsemi Single FDP083N15A 1 N-Channel MOSFET, 117 A, 150 V, 3-Pin TO-220 FDP083N15A-F102
- N° de stock RS:
- 186-7388
- Référence fabricant:
- FDP083N15A-F102
- Fabricant:
- onsemi
Sous-total (1 tube de 50 unités)*
114,70 €
(TVA exclue)
138,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 250 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 2,294 € | 114,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-7388
- Référence fabricant:
- FDP083N15A-F102
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 117A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | FDP083N15A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 294W | |
| Typical Gate Charge Qg @ Vgs | 64.5nC | |
| Maximum Gate Source Voltage Vgs | 30V dc | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS Compliant | |
| Height | 8.78mm | |
| Length | 10.36mm | |
| Width | 4.67mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 117A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series FDP083N15A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 294W | ||
Typical Gate Charge Qg @ Vgs 64.5nC | ||
Maximum Gate Source Voltage Vgs 30V dc | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS Compliant | ||
Height 8.78mm | ||
Length 10.36mm | ||
Width 4.67mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
RDS(on) = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A
Fast Switching Speed
Low Gate Charge, QG = 64.5nC ( Typ.)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
Applications
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
Uninterruptible Power Supply
Other Data Processing
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
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