Références fabricant

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

N° de stock RS:: 184-4217
Référence fabricant:: FDMA2002NZ
Fabricant:: onsemi

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

Sous-total (1 bobine de 3000 unités)*

585,00 €

(TVA exclue)

708,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	0,195 €	585,00 €

*Prix donné à titre indicatif

N° de stock RS:: 184-4217
Référence fabricant:: FDMA2002NZ
Fabricant:: onsemi

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	WDFN
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	268mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.4nC
	Forward Voltage Vf	0.9V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	0.75mm
	Width	2 mm
	Length	2mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type WDFN
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 268mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.4nC
	Forward Voltage Vf 0.9V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 0.75mm
	Width 2 mm
	Length 2mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet FDMA2002NZ

Pays d'origine :: TH

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

2.9 A, 30 V

RDS(ON) = 123 mΩ @ VGS = 4.5 V

RDS(ON) = 140 mΩ @ VGS = 3.0 V

RDS(ON) = 163 mΩ @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

Free from halogenated compounds and antimony oxides

Applications

This product is general usage and suitable for many different applications

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

Frais de livraison offerts pour toute commande de plus de 75,00 €

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