Diodes Inc N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK DMNH6011LK3-13

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
182-7152
Référence fabricant:
DMNH6011LK3-13
Fabricant:
DiodesZetex
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Marque

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

49.1 nC @ 10V

Width

6.2mm

Height

2.26mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Pays d'origine :
CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Rated to 175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Supplies
Motor Control
DC-DC Converters

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