Toshiba P-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23F SSM3J332R

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
182-5521
Référence fabricant:
SSM3J332R
Fabricant:
Toshiba
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Marque

Toshiba

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23F

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

144 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Width

1.8mm

Length

2.9mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

8.2 nC @ 4.5 V

Forward Diode Voltage

1.2V

Height

0.8mm

Pays d'origine :
TH
Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc.Toshiba has decades of experience in the development and manufacturing of MOSFETs. Its main products include the mid- to high-voltage DTMOS IV Series with a VDSS of 500V to 800V and the low-voltage UMOS Series with a VDSS of 12V to 250V.

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