Vishay 1 Type N-Channel Power MOSFET, 30 A, 60 V, 3-Pin TO-220AB IRLZ34PBF
- N° de stock RS:
- 180-8365
- Référence fabricant:
- IRLZ34PBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
66,60 €
(TVA exclue)
80,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 50 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,332 € | 66,60 € |
| 100 - 200 | 1,266 € | 63,30 € |
| 250 + | 1,199 € | 59,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8365
- Référence fabricant:
- IRLZ34PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Length | 14.4mm | |
| Width | 10.52 mm | |
| Height | 6.48mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Length 14.4mm | ||
Width 10.52 mm | ||
Height 6.48mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220AB-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 50mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 175°C
• Simple drive requirements
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Liens connexes
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- Vishay Type N-Channel MOSFET 60 V TO-220AB
- Vishay Type N-Channel MOSFET 60 V TO-220AB IRFZ44PBF
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB IRFZ44RPBF
- Vishay Type P-Channel MOSFET 60 V TO-220AB