Références fabricant

Vishay Single N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

N° de stock RS:: 180-8304
Référence fabricant:: IRF740ALPBF
Fabricant:: Vishay

Vishay Single N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 tube de 50 unités)*

65,40 €

(TVA exclue)

79,15 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 150 unité(s) expédiée(s) à partir du 21 septembre 2026

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Unité	Prix par unité	le tube*
50 - 50	1,308 €	65,40 €
100 - 200	1,243 €	62,15 €
250 +	1,177 €	58,85 €

*Prix donné à titre indicatif

N° de stock RS:: 180-8304
Référence fabricant:: IRF740ALPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-263
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.55Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Width	10.67mm
	Height	4.83mm
	Length	9.65mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-263
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.55Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Width 10.67mm
	Height 4.83mm
	Length 9.65mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ALPBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in industrial electronics. It operates in demanding thermal environments and suits designs requiring a three-terminal device with robust voltage handling and moderate current capability.

Features and Benefits:

• 400V drain rating for high-voltage switching applications
• 10A continuous drain current to support sustained loads
• 0.55Ω Rds(on) for controlled conduction losses
• 125W power dissipation enabling significant thermal throughput
• 36nC typical gate charge reducing drive energy requirements
• 30V maximum gate-source voltage for standard gate-drive compatibility

Applications

• Suitable for offline SMPS primary switching stages
• Ideal for power-factor-correction circuits in supplies
• Used with motor-control front-ends for low-speed drives
• Can be used for industrial lighting ballast switching
• Useful in high-voltage test and measurement equipment

What thermal range can it withstand during operation?

It is rated to operate from -55°C up to 150°C, allowing use across wide ambient and elevated junction conditions.

Which packaging form factor does it use for PCB mounting?

It is supplied in a TO-263 package, providing a flat power tab and three terminals for surface-mount assembly.

Are there environmental or materials standards associated with it?

The device complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material specifications.

What gate-drive considerations arise from its gate charge?

With a typical Qg of 36nC at Vgs, gate drivers must supply sufficient transient current to achieve the required switching speed without excessive delay.

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