Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF
- N° de stock RS:
- 180-8304
- Référence fabricant:
- IRF740ALPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
65,40 €
(TVA exclue)
79,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,308 € | 65,40 € |
| 100 - 200 | 1,243 € | 62,15 € |
| 250 + | 1,177 € | 58,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8304
- Référence fabricant:
- IRF740ALPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 9.65mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 9.65mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Power MOSFET, 400V Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ALPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial and electronic systems. It operates across a wide temperature range and is packaged for surface-mount assembly, offering a balance of voltage capability and continuous current for demanding control and power regulation tasks.
Features and Benefits:
• 400V drain voltage supports high-voltage switching applications • 10A continuous drain current enables sustained load handling • 0.55Ω low Rds(on) reduces conduction losses at operational currents • 125W power dissipation allows for elevated thermal loading • 36nC typical gate charge aids predictable switching behaviour • 150°C maximum operating temperature permits high-temperature operation
Applications
• Suitable for industrial motor drive switching stages • Ideal for high-voltage power supply switching elements • Used for inverter and converter topologies in automation systems • Can be used for load-switching in electrical control panels
What package type does it use for PCB mounting?
It is supplied in a TO-263 surface-mount package suitable for heatsinking on PCBs.
What environmental standards are associated with this component?
The device conforms to RoHS 2002/95/EC and IEC 61249-2-21 material standards.
What gate voltage limits should be observed during design?
The gate-source voltage must not exceed ±30V to avoid device damage.
What are the thermal operating boundaries for long-term use?
The component is rated for continuous operation between -55°C and 150°C.
How many pins are present for electrical connections?
The device has three pins configured for single-transistor operation.
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