Vishay SiP32431DR Type P-Channel MOSFET, 1.2 A, 5.5 V, 6-Pin SC-70-6 SIP32431DR3-T1GE3
- N° de stock RS:
- 180-7822
- Référence fabricant:
- SIP32431DR3-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
9,15 €
(TVA exclue)
11,075 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 825 unité(s) expédiée(s) à partir du 03 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 225 | 0,366 € | 9,15 € |
| 250 - 600 | 0,347 € | 8,68 € |
| 625 - 1225 | 0,31 € | 7,75 € |
| 1250 - 2475 | 0,223 € | 5,58 € |
| 2500 + | 0,216 € | 5,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7822
- Référence fabricant:
- SIP32431DR3-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 5.5V | |
| Package Type | SC-70-6 | |
| Series | SiP32431DR | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 147mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Operating Temperature | 85°C | |
| Length | 2.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Width | 2.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 5.5V | ||
Package Type SC-70-6 | ||
Series SiP32431DR | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 147mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Operating Temperature 85°C | ||
Length 2.15mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Width 2.2mm | ||
Automotive Standard No | ||
Vishay SiP32431DR Series MOSFET, 5.5V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - SIP32431DR3-T1GE3
This MOSFET is a P‑channel surface‑mount transistor designed for low‑voltage switching in Compact electronic assemblies. It operates within a modest temperature range for typical industrial environments and is supplied in a small 6‑lead SMD package suited to dense board layouts. The device targets applications requiring controlled low‑current switching and modest power handling in automated and electronic systems.
Features and Benefits:
• Maximum drain‑source voltage 5.5V enables low‑voltage switching capability
• Continuous drain current rating 1.2A supports moderate load currents
• Drain‑source on‑resistance 147mΩ reduces conduction losses
• Power dissipation 250mW limits thermal rise under steady conditions
• Operating range -40 to 85°C permits use across common environments
• RoHS compliance simplifies end‑product material management
• Continuous drain current rating 1.2A supports moderate load currents
• Drain‑source on‑resistance 147mΩ reduces conduction losses
• Power dissipation 250mW limits thermal rise under steady conditions
• Operating range -40 to 85°C permits use across common environments
• RoHS compliance simplifies end‑product material management
Applications
• Suitable for gate drive and level‑shifting in control modules
• Ideal for battery management low‑voltage disconnects
• Used for load switching in Compact automation sensors
• Can be used for signal‑path protection in measurement equipment
• Used with small power‑management circuits on dense PCBs
• Ideal for battery management low‑voltage disconnects
• Used for load switching in Compact automation sensors
• Can be used for signal‑path protection in measurement equipment
• Used with small power‑management circuits on dense PCBs
What mounting style does it use for PCB assembly?
It is a surface‑mount device in a six‑lead SC‑70‑6 package for automated placement.
How does the device manage thermal limits during continuous operation?
Its maximum steady power dissipation is 250mW, so board thermal design and copper area must match expected dissipation to maintain safe junction temperatures.
Is this device suitable for automotive system qualification?
It is not specified as automotive standard approved and should not be assumed for qualified vehicle systems.
What type of conduction does the transistor provide?
The component is a P‑channel MOSFET, providing P‑type channel conduction for high‑side or polarity‑sensitive switching.
Liens connexes
- Vishay SiP32431 Type P-Channel MOSFET 5.5 V, 6-Pin SC-70
- LMV331IDCKR Texas Instruments Open Collector O/P, 2.7 → 5.5 V 5-Pin SC-70
- ADCMP606BKSZ-R2 Analog Devices CML O/P, 0.0021μs 2.5 → 5.5 V 6-Pin SC-70
- MCP6546T-I/LT Microchip 1-Channel Analogue Comparator Push Pull O/P, 4000 ns 5.5 V 5.5 V 5-Pin SC-70
- Maxim Integrated Comparator Open Drain O/P, 100 ns 5.5 V 1.8 V 5-Pin SC-70
- MAX9648AXK+T Maxim Integrated Comparator Open Drain O/P, 100 ns 5.5 V 1.8 V 5-Pin SC-70
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-70
- Texas Instruments 1-Channel Comparator Push Pull O/P, 40 ns 5.5 V 2.7 V 5-Pin SC-70
