onsemi NDT451AN Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 4-Pin SOT-223

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Sous-total (1 bobine de 4000 unités)*

1 724,00 €

(TVA exclue)

2 088,00 €

(TVA incluse)

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  • Expédition à partir du 06 avril 2026
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Prix par unité
la bobine*
4000 +0,431 €1 724,00 €

*Prix donné à titre indicatif

N° de stock RS:
178-7632
Référence fabricant:
NDT451AN
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-223

Series

NDT451AN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

3W

Maximum Operating Temperature

150°C

Height

1.7mm

Length

6.7mm

Standards/Approvals

No

Width

3.7 mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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