Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 178-3853P
- Référence fabricant:
- Si2319DDS-T1-GE3
- Fabricant:
- Vishay Siliconix
Sous-total 50 unités (conditionné en bande continue)*
23,75 €
(TVA exclue)
28,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 4 050 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 50 + | 0,475 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-3853P
- Référence fabricant:
- Si2319DDS-T1-GE3
- Fabricant:
- Vishay Siliconix
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
Statut RoHS : Exempté
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery switch
• Load switch
• Motor drive control
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested