Vishay IRFI730G Type N-Channel Power MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220 IRFI730GPBF

N° de stock RS:: 178-0848
Référence fabricant:: IRFI730GPBF
Fabricant:: Vishay

Vishay IRFI730G Type N-Channel Power MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220 IRFI730GPBF

Sous-total (1 tube de 50 unités)*

64,80 €

(TVA exclue)

78,40 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

50 unité(s) expédiée(s) à partir du 10 août 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 +	1,296 €	64,80 €

*Prix donné à titre indicatif

N° de stock RS:: 178-0848
Référence fabricant:: IRFI730GPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.7A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220
	Series	IRFI730G
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	38nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	9.8mm
	Length	10.3mm
	Standards/Approvals	RoHS
	Width	4.8mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.7A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220
	Series IRFI730G
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 38nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 9.8mm
	Length 10.3mm
	Standards/Approvals RoHS
	Width 4.8mm
	Automotive Standard No

Datasheet

Vishay IRFI730G Series Power MOSFET, 400V Maximum Drain Source Voltage, 3.7A Maximum Continuous Drain Current - IRFI730GPBF

This power MOSFET is a high-voltage, N-channel switching transistor designed for through-hole mounting in power conversion and control circuits. It operates in enhancement mode and is suitable where compact TO-220 packaging and moderate current handling are required. The device is rated to operate across a wide ambient temperature span and complies with RoHS environmental restrictions.

Features and Benefits:

• 400V drain-to-source rating enables high-voltage switching
• 3.7A continuous drain current supports moderate load currents
• 1Ω maximum Rds(on) reduces conduction losses under load
• 35W power dissipation allows sustained thermal performance
• 38nC typical gate charge gives predictable switching behaviour
• 20V gate rating permits standard gate-drive voltages

Applications

• Used for switching in industrial power supplies
• Suitable for motor control in low-power drives
• Ideal for high-voltage LED driver stages
• Can be used for inverter front-end switching
• Used with discrete power control modules

What package and mounting style does it use?

It is supplied in a TO-220 package and intended for through-hole mounting, facilitating heatsinking on standard panels.

What thermal range can be expected during operation?

The component is specified to operate from -55°C up to 150°C, making it suitable for demanding thermal environments.

What gate-drive constraints should be observed?

The gate-to-source absolute rating is ±20V, so drive circuits should remain within this limit to avoid damage.

Is this device suitable for automotive qualification?

It is not specified as an automotive-standard part

selection should consider automotive qualification requirements separately.