Microchip TN2106 N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 177-9842P
- Référence fabricant:
- TN2106K1-G
- Fabricant:
- Microchip
Sous-total 20 unités (conditionné en bande continue)*
11,52 €
(TVA exclue)
13,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 100 unité(s) expédiée(s) à partir du 05 octobre 2026
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Unité | Prix par unité |
|---|---|
| 20 + | 0,576 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 177-9842P
- Référence fabricant:
- TN2106K1-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TN2106 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TN2106 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain