ROHM Dual SH8MA4 2 Type P, Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOP SH8MA4TB1
- N° de stock RS:
- 177-6205
- Référence fabricant:
- SH8MA4TB1
- Fabricant:
- ROHM
Sous-total (1 bobine de 2500 unités)*
1 210,00 €
(TVA exclue)
1 465,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,484 € | 1 210,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 177-6205
- Référence fabricant:
- SH8MA4TB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOP | |
| Series | SH8MA4 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15.5nC | |
| Forward Voltage Vf | -1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.05 mm | |
| Length | 5.2mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOP | ||
Series SH8MA4 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15.5nC | ||
Forward Voltage Vf -1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 4.05 mm | ||
Length 5.2mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Statut RoHS : Exempté
- Pays d'origine :
- TH
SH8MA4TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching.
Low on - resistance.
Small Surface Mount Package (SOP8).
Pb-free lead plating
Halogen Free.
Liens connexes
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