ROHM R6020ENZ N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PF R6020ENZC8

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
177-6072
Référence fabricant:
R6020ENZC8
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PF

Series

R6020ENZ

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.7mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Length

15.7mm

Number of Elements per Chip

1

Height

26.7mm

Forward Diode Voltage

1.5V

Statut RoHS non applicable

Pays d'origine :
TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

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