onsemi NVMFS4C310N Type N-Channel MOSFET, 51 A, 30 V Enhancement, 6-Pin DFN
- N° de stock RS:
- 172-3329
- Référence fabricant:
- NVMFS4C310NT1G
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 172-3329
- Référence fabricant:
- NVMFS4C310NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NVMFS4C310N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NVMFS4C310N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection
These Devices are Pb−Free
Liens connexes
- onsemi NVMFS4C310N N-Channel MOSFET 30 V, 6-Pin DFN NVMFS4C310NT1G
- onsemi NTMFS0D5N N-Channel MOSFET 30 V, 5-Pin DFN NTMFS0D5N03CT1G
- onsemi NTMFS0D6N N-Channel MOSFET 30 V, 5-Pin DFN NTMFS0D6N03CT1G
- onsemi NTMFS1D7N N-Channel MOSFET 30 V, 5-Pin DFN NTMFS1D7N03CGT1G
- onsemi NTMFS0D8N N-Channel MOSFET 30 V, 8-Pin DFN NTMFS0D8N03CT1G
- onsemi PowerTrench P-Channel MOSFET 30 V, 8-Pin MLP8 FDMC6679AZ
- onsemi N-Channel MOSFET 60 V DFN NTMFS6H824NT1G
- onsemi N-Channel MOSFET 60 V DFN NTMFS5C645NT1G
