onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

1 955,00 €

(TVA exclue)

2 365,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 +0,782 €1 955,00 €

*Prix donné à titre indicatif

N° de stock RS:
172-3318
Référence fabricant:
NVD5C464NT4G
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

NVD5C464N

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.73mm

Height

2.25mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 23 mΩ

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