onsemi NVTFS5C453NL Type N-Channel MOSFET, 107 A, 40 V Enhancement, 8-Pin WDFN
- N° de stock RS:
- 171-8333
- Référence fabricant:
- NVTFS5C453NLWFTAG
- Fabricant:
- onsemi
Sous-total (1 bobine de 1500 unités)*
1 062,00 €
(TVA exclue)
1 285,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,708 € | 1 062,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-8333
- Référence fabricant:
- NVTFS5C453NLWFTAG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 107A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WDFN | |
| Series | NVTFS5C453NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.84V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Width | 3.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 107A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WDFN | ||
Series NVTFS5C453NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.84V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Width 3.15 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Low on-resistance
minimizes conduction losses
Low gate charge
minimizes switching losses
u8FL package
very small footprint enabling smaller PCBs and modules
suitable for automotive applications
Pb−Free
Small Footprint (3x3 mm)
Compact Design
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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