Infineon IPD068N10N3 G N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252
- N° de stock RS:
- 171-1939P
- Référence fabricant:
- IPD068N10N3GATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total 100 unités (conditionné en bande continue)*
109,30 €
(TVA exclue)
132,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 17 280 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 100 - 240 | 1,093 € |
| 250 - 490 | 1,039 € |
| 500 - 990 | 0,954 € |
| 1000 + | 0,839 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 171-1939P
- Référence fabricant:
- IPD068N10N3GATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD068N10N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 12.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 7.47mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD068N10N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 12.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 7.47mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
Statut RoHS non applicable
Infineon MOSFET
The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Easy to design products
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Lead (Pb) free plating
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
Applications
• Class D audio amplifiers
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC