onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

147,00 €

(TVA exclue)

177,00 €

(TVA incluse)

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  • Plus 51 000 unité(s) expédiée(s) à partir du 31 décembre 2025
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Prix par unité
la bobine*
3000 - 30000,049 €147,00 €
6000 - 120000,047 €141,00 €
15000 +0,044 €132,00 €

*Prix donné à titre indicatif

N° de stock RS:
169-8540
Référence fabricant:
NDS7002A
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

280mA

Maximum Drain Source Voltage Vds

60V

Series

NDS7002A

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300mW

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1.2nC

Minimum Operating Temperature

-65°C

Forward Voltage Vf

0.88V

Maximum Operating Temperature

150°C

Width

1.3 mm

Length

2.92mm

Standards/Approvals

No

Height

0.93mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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