onsemi Single PowerTrench N-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-523 FDY302NZ
- N° de stock RS:
- 166-3667
- Référence fabricant:
- FDY302NZ
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 166-3667
- Référence fabricant:
- FDY302NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Transistor Configuration | Single | |
| Series | PowerTrench | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 600 mA | |
| Maximum Drain Source Voltage (Vds) | 20 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | SOT-523 (SC-89) | |
| Height | 780 μm | |
| Length | 1.7 mm | |
| Maximum Drain Source Resistance (Rds) | 1.2 Ω | |
| Maximum Gate Source Voltage (Vgs) | 12 V, -12 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 625 mW | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 980 μm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Transistor Configuration Single | ||
Series PowerTrench | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 600 mA | ||
Maximum Drain Source Voltage (Vds) 20 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type SOT-523 (SC-89) | ||
Height 780 μm | ||
Length 1.7 mm | ||
Maximum Drain Source Resistance (Rds) 1.2 Ω | ||
Maximum Gate Source Voltage (Vgs) 12 V, -12 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 625 mW | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 980 μm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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