onsemi Single PowerTrench 1 Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC FDS6692A
- N° de stock RS:
- 166-2832
- Référence fabricant:
- FDS6692A
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
1 312,50 €
(TVA exclue)
1 587,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,525 € | 1 312,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-2832
- Référence fabricant:
- FDS6692A
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.47W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 4.9mm | |
| Height | 1.575mm | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.47W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 4.9mm | ||
Height 1.575mm | ||
Number of Elements per Chip 1 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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