onsemi QFET P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 FQP8P10

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
166-2169
Référence fabricant:
FQP8P10
Fabricant:
onsemi
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Marque

onsemi

Channel Type

P

Maximum Continuous Drain Current

5.7 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

530 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Height

16.3mm

Minimum Operating Temperature

-55 °C

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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