onsemi Single PowerTrench 1 N-Channel MOSFET, 16 A, 150 V Enhancement, 8-Pin WDFN FDMC86260
- N° de stock RS:
- 166-2094
- Référence fabricant:
- FDMC86260
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 166-2094
- Référence fabricant:
- FDMC86260
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Transistor Configuration | Single | |
| Series | PowerTrench | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 16 A | |
| Maximum Drain Source Voltage (Vds) | 150 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | WDFN | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 750 μm | |
| Length | 3.3 mm | |
| Maximum Drain Source Resistance (Rds) | 69 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 54 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 15 nC | |
| Width | 3.3 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Transistor Configuration Single | ||
Series PowerTrench | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 16 A | ||
Maximum Drain Source Voltage (Vds) 150 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type WDFN | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 750 μm | ||
Length 3.3 mm | ||
Maximum Drain Source Resistance (Rds) 69 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 54 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 15 nC | ||
Width 3.3 mm | ||
- Pays d'origine :
- PH
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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