onsemi QFET Type N-Channel MOSFET, 8 A, 900 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 166-1889
- Référence fabricant:
- FQP9N90C
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
176,75 €
(TVA exclue)
213,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 850 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 3,535 € | 176,75 € |
| 100 + | 3,323 € | 166,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-1889
- Référence fabricant:
- FQP9N90C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 205W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.4mm | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 205W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 150°C | ||
Height 9.4mm | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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