onsemi Isolated 2 Type N-Channel Power MOSFET, 115 mA, 60 V Enhancement, 6-Pin SC-70
- N° de stock RS:
- 166-1841
- Référence fabricant:
- 2N7002DW
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
240,00 €
(TVA exclue)
300,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 69 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,08 € | 240,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-1841
- Référence fabricant:
- 2N7002DW
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Height | 1mm | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Height 1mm | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The 2N7002DW is a Dual N-channel general purpose MOSFET. It features low-on resistance and low gate threshold voltage. It also features fast switching speed and is available in an ultra-small surface mount package. This Dual N-channel MOSFET is typically used in all general purpose applications, but it is commonly used in motor controls and PMFs (Power Management Functions).
Features and benefits:
• Dual N-Channel
• Low on resistance
• Low gate threshold
• Fast switching speed
• Low input & output leak
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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