onsemi PowerTrench Type N-Channel MOSFET, 50 A, 250 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 166-1758
- Référence fabricant:
- FDB2710
- Fabricant:
- onsemi
Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
- N° de stock RS:
- 166-1758
- Référence fabricant:
- FDB2710
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 260W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 260W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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