Infineon HEXFET N-Channel MOSFET, 65 A, 30 V, 3-Pin DPAK IRLR7821PBF
- N° de stock RS:
- 166-0958
- Référence fabricant:
- IRLR7821PBF
- Fabricant:
- Infineon
Sous-total (1 tube de 75 unités)*
42,825 €
(TVA exclue)
51,825 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 + | 0,571 € | 42,83 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-0958
- Référence fabricant:
- IRLR7821PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 65 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 10 nC @ 4.5 V | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 65 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 4.5 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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