onsemi N+P Load Switch 2 Type P, Type N-Channel Power MOSFET, 1.3 A, 8 V Enhancement, 6-Pin SC-88
- N° de stock RS:
- 163-1114
- Référence fabricant:
- NTJD1155LT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
237,00 €
(TVA exclue)
288,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,079 € | 237,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 163-1114
- Référence fabricant:
- NTJD1155LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | N+P Load Switch | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 8V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration N+P Load Switch | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Features and Benefits:
• ESD Protection
• Ultra-low Rds P-Channel load switch
• V range of 1.8 – 8.0V
• ON/OFF Range – 1.5 to 8.0V
• SOT 363 package
• Drive loads up to 1.3A with 8V.
Applications:
• High side load switch with level shift
• Mobile phones
• Digital cameras
• PDA’s
• Media Players
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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