International Rectifier IRLML2502 Type N-Channel MOSFET, 4.2 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2502TRPBF
- RS Stock No.:
- 162-3304
- Mfr. Part No.:
- IRLML2502TRPBF
- Brand:
- International Rectifier
Bulk discount available
Subtotal (1 pack of 20 units)*
4,36 €
(exc. VAT)
5,28 €
(inc. VAT)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 120 unité(s) prête(s) à être expédiée(s)
- Plus 680 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | 0,218 € | 4,36 € |
| 200 - 480 | 0,163 € | 3,26 € |
| 500 - 980 | 0,152 € | 3,04 € |
| 1000 - 1980 | 0,098 € | 1,96 € |
| 2000 + | 0,077 € | 1,54 € |
*price indicative
- RS Stock No.:
- 162-3304
- Mfr. Part No.:
- IRLML2502TRPBF
- Brand:
- International Rectifier
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Marque | International Rectifier | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | IRLML2502 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Marque International Rectifier | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series IRLML2502 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
Non Compliant
- COO (Country of Origin):
- TH
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Related links
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