ROHM Dual N-Channel MOSFET, 4.5 A, 30 V, 6-Pin TSMT RQ6E045BNTCR
- N° de stock RS:
- 150-1460P
- Référence fabricant:
- RQ6E045BNTCR
- Fabricant:
- ROHM
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 150-1460P
- Référence fabricant:
- RQ6E045BNTCR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSMT | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 49 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.4 nC @ 10 V | |
| Width | 1.8mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSMT | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 49 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.4 nC @ 10 V | ||
Width 1.8mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
Low on -resistance
Built-in G-S Protection Diode
Small Surface Mount Package(TSMT6)
Pb-free lead plating, RoHS compliant
Built-in G-S Protection Diode
Small Surface Mount Package(TSMT6)
Pb-free lead plating, RoHS compliant