onsemi BSS138W Type N-Channel MOSFET, 210 mA, 50 V Enhancement, 3-Pin SC-70
- N° de stock RS:
- 146-2168
- Référence fabricant:
- BSS138W
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
141,00 €
(TVA exclue)
171,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,047 € | 141,00 € |
| 6000 - 12000 | 0,046 € | 138,00 € |
| 15000 + | 0,044 € | 132,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 146-2168
- Référence fabricant:
- BSS138W
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-70 | |
| Series | BSS138W | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 340mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-70 | ||
Series BSS138W | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 340mW | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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