onsemi BSS138W Type N-Channel MOSFET, 210 mA, 50 V Enhancement, 3-Pin SC-70

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Sous-total (1 bobine de 3000 unités)*

177,00 €

(TVA exclue)

213,00 €

(TVA incluse)

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  • Plus 15 000 unité(s) expédiée(s) à partir du 01 janvier 2026
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Prix par unité
la bobine*
3000 - 30000,059 €177,00 €
6000 - 120000,056 €168,00 €
15000 +0,053 €159,00 €

*Prix donné à titre indicatif

N° de stock RS:
146-2168
Référence fabricant:
BSS138W
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

50V

Package Type

SC-70

Series

BSS138W

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Power Dissipation Pd

340mW

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2mm

Width

1.25 mm

Height

0.9mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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