Infineon OptiMOS™ Dual N-Channel MOSFET, 9.3 A, 30 V, 8-Pin SOIC BSO150N03MDGXUMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
145-9453
Référence fabricant:
BSO150N03MDGXUMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.3 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

6.1 nC @ 4.5 V

Height

1.65mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™ Dual Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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