STMicroelectronics MDmesh N-Channel MOSFET, 5 A, 600 V, 3-Pin DPAK STB7ANM60N
- N° de stock RS:
- 145-8812
- Référence fabricant:
- STB7ANM60N
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
505,00 €
(TVA exclue)
611,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 0,505 € | 505,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8812
- Référence fabricant:
- STB7ANM60N
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Series | MDmesh | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 900 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.4mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Series MDmesh | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 6.6mm | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Height 2.4mm | ||
- Pays d'origine :
- CN
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics