onsemi PowerTrench N-Channel MOSFET, 211 A, 80 V, 3-Pin TO-220 FDP032N08B_F102
- N° de stock RS:
- 145-5484
- Référence fabricant:
- FDP032N08B_F102
- Fabricant:
- onsemi
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 145-5484
- Référence fabricant:
- FDP032N08B_F102
- Fabricant:
- onsemi
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 211 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-220 | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 263 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 111 nC @ 10 V | |
| Width | 4.672mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 15.215mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 211 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 263 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 111 nC @ 10 V | ||
Width 4.672mm | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 15.215mm | ||
Minimum Operating Temperature -55 °C | ||
- Pays d'origine :
- US
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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