onsemi UniFET Type N-Channel MOSFET, 15 A, 650 V Enhancement, 3-Pin TO-220

Voir l’ensemble des MOSFETs

Sous-total (1 tube de 50 unités)*

66,15 €

(TVA exclue)

80,05 €

(TVA incluse)

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  • 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
50 +1,323 €66,15 €

*Prix donné à titre indicatif

N° de stock RS:
145-4336
Référence fabricant:
FDPF15N65
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

440mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.5nC

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

38.5W

Maximum Operating Temperature

150°C

Width

4.7 mm

Length

10.16mm

Standards/Approvals

No

Height

15.87mm

Automotive Standard

No

Pays d'origine :
CN

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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