Nexperia N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 NX7002AK,215
- N° de stock RS:
- 136-2122
- Référence fabricant:
- NX7002AK,215
- Fabricant:
- Nexperia
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 136-2122
- Référence fabricant:
- NX7002AK,215
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 1.33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 0.33 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 1.33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 0.33 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- Pays d'origine :
- CN
Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA)
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Very fast switching
Trench MOSFET technology
ESD protected
Trench MOSFET technology
ESD protected