Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S
- N° de stock RS:
- 133-2800
- Référence fabricant:
- TK6P65W,RQ(S
- Fabricant:
- Toshiba
Temporairement en rupture de stock
- N° de stock RS:
- 133-2800
- Référence fabricant:
- TK6P65W,RQ(S
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1.7V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1.7V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Liens connexes
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