onsemi PowerTrench Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 3000 unités)*

387,00 €

(TVA exclue)

468,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
3000 +0,129 €387,00 €

*Prix donné à titre indicatif

N° de stock RS:
124-1705
Référence fabricant:
FDN360P
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

0.94mm

Standards/Approvals

No

Length

2.92mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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