DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC
- N° de stock RS:
- 122-0202
- Référence fabricant:
- DMC3021LSD-13
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 2500 unités)*
497,50 €
(TVA exclue)
602,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
- 2 500 unité(s) expédiée(s) à partir du 22 avril 2026
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,199 € | 497,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 122-0202
- Référence fabricant:
- DMC3021LSD-13
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Length 4.95mm | ||
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
- Pays d'origine :
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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