Renesas P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK-L 2SJ529L-E
- N° de stock RS:
- 121-6880P
- Référence fabricant:
- 2SJ529L-E
- Fabricant:
- Renesas Electronics
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 121-6880P
- Référence fabricant:
- 2SJ529L-E
- Fabricant:
- Renesas Electronics
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK-L | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Width | 2.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Height | 7.2mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK-L | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 6.5mm | ||
Width 2.3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 7.2mm | ||
- Pays d'origine :
- MY