Vishay SQ N-Channel MOSFET, 330 A, 40 V N, 8-Pin PowerPAK SO-8L SQJ138EP-T1_NE3
- N° de stock RS:
- 878-895
- Référence fabricant:
- SQJ138EP-T1_NE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,62 €
(TVA exclue)
1,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,62 € |
| 10 - 99 | 1,04 € |
| 100 - 499 | 0,76 € |
| 500 - 999 | 0,65 € |
| 1000 + | 0,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 878-895
- Référence fabricant:
- SQJ138EP-T1_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.25mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SQ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.25mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- GB
The Vishay automotive N-Channel MOSFET specifically designed to efficiently handle varying voltage applications, ensuring robust performance in demanding conditions, including high temperatures.
TrenchFET Gen IV technology optimises switching characteristics and efficiency
Rated for a maximum drain-source voltage of 40 V, providing versatile application potential
Features a low on-state resistance of 0.0018 Ohm at 10 V, ensuring minimal power loss
AEC-Q101 qualified, guaranteeing reliability in automotive environments
100% R and UIS tested, ensuring high quality and reliability
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