STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 58 A, 650 V Enhancement Mode, 4-Pin PG-TO-247
- N° de stock RS:
- 800-466
- Référence fabricant:
- STW65N040M9-4
- Fabricant:
- STMicroelectronics
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7,66 €
(TVA exclue)
9,27 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 300 unité(s) expédiée(s) à partir du 04 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,66 € |
| 10 - 49 | 7,43 € |
| 50 - 99 | 7,20 € |
| 100 + | 6,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 800-466
- Référence fabricant:
- STW65N040M9-4
- Fabricant:
- STMicroelectronics
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | STH285N10F8-6AG | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 321W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | ECOPACK | |
| Height | 21.1mm | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series STH285N10F8-6AG | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 321W | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals ECOPACK | ||
Height 21.1mm | ||
Width 5.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
Very low FOM (RDS(on)·Qg)
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Excellent switching performance thanks to the extra driving source pin
Liens connexes
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