Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 395 A, 1200 V Enhancement, 15-Pin AG-62MMHB
- N° de stock RS:
- 762-897
- Référence fabricant:
- FF1MR12KM1HSHPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
588,59 €
(TVA exclue)
712,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 10 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 588,59 € |
| 10 + | 450,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-897
- Référence fabricant:
- FF1MR12KM1HSHPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N channel | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 395A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | XHP 2 | |
| Package Type | AG-62MMHB | |
| Mount Type | Screw | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | -23V | |
| Typical Gate Charge Qg @ Vgs | 1.6μC | |
| Maximum Power Dissipation Pd | 2300W | |
| Forward Voltage Vf | 6.25V | |
| Maximum Operating Temperature | 125°C | |
| Transistor Configuration | Half Bridge | |
| Width | 61.4mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N channel | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 395A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series XHP 2 | ||
Package Type AG-62MMHB | ||
Mount Type Screw | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs -23V | ||
Typical Gate Charge Qg @ Vgs 1.6μC | ||
Maximum Power Dissipation Pd 2300W | ||
Forward Voltage Vf 6.25V | ||
Maximum Operating Temperature 125°C | ||
Transistor Configuration Half Bridge | ||
Width 61.4mm | ||
Standards/Approvals RoHS Compliant | ||
Length 106.4mm | ||
Automotive Standard No | ||
- Pays d'origine :
- HU
The Infineon CoolSiC Trench MOSFET half bridge module features voltage rating of 1200 V and supports high current density. It is suitable for UPS systems, DC/DC converter, High-frequency switching application, Solar applications, Energy storage systems (ESS), and DC charger for EV.
Low switching losses
High current density
Qualified for industrial applications
4 kV AC 1 min insulation
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