STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2
- N° de stock RS:
- 719-651
- Référence fabricant:
- STH345N6F7-2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 1000 unités)*
4 380,00 €
(TVA exclue)
5 300,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 10 juillet 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 9000 | 4,38 € | 4 380,00 € |
| 10000 - 99000 | 3,828 € | 3 828,00 € |
| 100000 - 499000 | 3,18 € | 3 180,00 € |
| 500000 - 999000 | 2,844 € | 2 844,00 € |
| 1000000 + | 2,628 € | 2 628,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-651
- Référence fabricant:
- STH345N6F7-2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 397A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STH | |
| Package Type | H2PAK-2 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.7mm | |
| Length | 9.3mm | |
| Width | 10.4mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 397A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STH | ||
Package Type H2PAK-2 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Operating Temperature 175°C | ||
Height 4.7mm | ||
Length 9.3mm | ||
Width 10.4mm | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Liens connexes
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