STMicroelectronics G-HEMT P-Channel Transistor, 10 A, 700 V Enhancement, 8-Pin PowerFLAT SGT240R70ILB
- N° de stock RS:
- 719-636
- Référence fabricant:
- SGT240R70ILB
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,41 €
(TVA exclue)
4,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 270 unité(s) expédiée(s) à partir du 30 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,41 € |
| 10 - 99 | 2,36 € |
| 100 - 499 | 1,84 € |
| 500 - 999 | 1,72 € |
| 1000 + | 1,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-636
- Référence fabricant:
- SGT240R70ILB
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PowerFLAT | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -6V, 7V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 900μm | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PowerFLAT | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -6V, 7V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 900μm | ||
Width 8.1mm | ||
Length 8.1mm | ||
- Pays d'origine :
- CN
The STMicroelectronics 700 V 10 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
Liens connexes
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT140R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT105R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO
- STMicroelectronics G-HEMT P-Channel Power MOSFET 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerFLAT STL42P6LLF6
- STMicroelectronics STripFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT STL60P4LLF6