STMicroelectronics G-HEMT P-Channel Transistor, 10 A, 700 V Enhancement, 8-Pin PowerFLAT SGT240R70ILB
- N° de stock RS:
- 719-636
- Référence fabricant:
- SGT240R70ILB
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
1,06 €
(TVA exclue)
1,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 1,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-636
- Référence fabricant:
- SGT240R70ILB
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Transistor | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | G-HEMT | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Gate Source Voltage Vgs | -6 to 7 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Transistor | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series G-HEMT | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Gate Source Voltage Vgs -6 to 7 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Height 0.9mm | ||
- Pays d'origine :
- CN
The STMicroelectronics 700 V 10 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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