DiodesZetex DMG2302UKQ N channel-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 DMG2302UKQ-7
- N° de stock RS:
- 719-562
- Référence fabricant:
- DMG2302UKQ-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
0,71 €
(TVA exclue)
0,86 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 2 755 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,142 € | 0,71 € |
| 125 - 495 | 0,128 € | 0,64 € |
| 500 - 2495 | 0,112 € | 0,56 € |
| 2500 + | 0,096 € | 0,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-562
- Référence fabricant:
- DMG2302UKQ-7
- Fabricant:
- DiodesZetex
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG2302UKQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.5mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG2302UKQ | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.5mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET, specifically engineered to meet the rigorous demands of automotive applications. Designed to deliver superior efficiency, it excels in power management and control functions, making it an Ideal choice for tasks such as DC-DC conversion and motor management. With its robust construction and compliance with AEC-Q101 standards, this device is recognised for its reliability and high performance in critical environments. The product combines low on-resistance with fast switching capabilities, ensuring it operates efficiently under various conditions.
Low on resistance characteristics enhance power efficiency
Fast switching speed optimises performance for high-frequency applications
Qualified to AEC-Q101 standards, ensuring reliability in automotive applications
Qualified for PPAP, supporting Advanced product quality planning
ESD protected gate design improves robustness and safety
Halogen and antimony-free, contributing to environmentally friendly practices
Designed with low input capacitance for improved responsiveness
Compliant with RoHS standards, ensuring adherence to environmental regulations
Liens connexes
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