DiodesZetex DMN6140L N channel-Channel MOSFET, -2 A, 60 V Enhancement, 3-Pin SOT-23 DMN6140L-13
- N° de stock RS:
- 719-547
- Référence fabricant:
- DMN6140L-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
0,76 €
(TVA exclue)
0,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,152 € | 0,76 € |
| 125 - 495 | 0,134 € | 0,67 € |
| 500 - 2495 | 0,12 € | 0,60 € |
| 2500 - 4995 | 0,104 € | 0,52 € |
| 5000 + | 0,096 € | 0,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-547
- Référence fabricant:
- DMN6140L-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN6140L | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN6140L | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management solutions. It excels in minimising on-state resistance while delivering superior switching performance, making it suitable for a variety of applications including DC-DC converters and analog switches. This semiconductor device is built to support high reliability standards and is fully RoHS compliant, ensuring safety and environmental sustainability in its use across modern electronic designs.
Low on resistance improves overall circuit efficiency
Fast switching speeds enhance performance in power management applications
Supports a maximum drain-source voltage of 60V, suitable for a wide range of use cases
Low input capacitance allows for minimal drive power, increasing system efficiency
Compact SOT23 package facilitates easy integration into Compact electronic designs
Lead-free and fully compliant with environmental regulations, promoting eco-friendly manufacturing
Qualified according to AEC-Q101 standards, ensuring high reliability in automotive applications
Moisture sensitivity level of 1 ensures safe handling and longevity
Liens connexes
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