DiodesZetex DMN6140L N channel-Channel MOSFET, -2 A, 60 V Enhancement, 3-Pin SOT-23 DMN6140L-13
- N° de stock RS:
- 719-547
- Référence fabricant:
- DMN6140L-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
0,76 €
(TVA exclue)
0,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 9 990 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,152 € | 0,76 € |
| 125 - 495 | 0,134 € | 0,67 € |
| 500 - 2495 | 0,12 € | 0,60 € |
| 2500 - 4995 | 0,104 € | 0,52 € |
| 5000 + | 0,096 € | 0,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-547
- Référence fabricant:
- DMN6140L-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | -2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN6140L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 2.5mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id -2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN6140L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 2.5mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management solutions. It excels in minimising on-state resistance while delivering superior switching performance, making it suitable for a variety of applications including DC-DC converters and analog switches. This semiconductor device is built to support high reliability standards and is fully RoHS compliant, ensuring safety and environmental sustainability in its use across modern electronic designs.
Low on resistance improves overall circuit efficiency
Fast switching speeds enhance performance in power management applications
Supports a maximum drain-source voltage of 60V, suitable for a wide range of use cases
Low input capacitance allows for minimal drive power, increasing system efficiency
Compact SOT23 package facilitates easy integration into Compact electronic designs
Lead-free and fully compliant with environmental regulations, promoting eco-friendly manufacturing
Qualified according to AEC-Q101 standards, ensuring high reliability in automotive applications
Moisture sensitivity level of 1 ensures safe handling and longevity
Liens connexes
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