DiodesZetex DMG2301L P-Channel MOSFET, -3 A, -20 V Enhancement, 3-Pin SOT-23 DMG2301L-7
- N° de stock RS:
- 719-543
- Référence fabricant:
- DMG2301L-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
120,00 €
(TVA exclue)
150,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 12000 | 0,04 € | 120,00 € |
| 15000 + | 0,039 € | 117,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-543
- Référence fabricant:
- DMG2301L-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Series | DMG2301L | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.15mm | |
| Width | 2.55 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Series DMG2301L | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.15mm | ||
Width 2.55 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex Robust P-channel enhancement mode MOSFET designed for high-efficiency power management applications. This device is engineered to achieve low on-resistance while ensuring superior switching performance, making it Ideal for use in automotive applications, DC-DC converters, and motor control circuits. With a focus on eco-friendliness, it is halogen and antimony-free, fully compliant with RoHS standards.
Low on resistance for efficient power handling
Fast switching speed optimises performance in power management applications
Continuous drain current rating of -3A ensures robust performance under load conditions
Completely lead-free and meets EU directives for environmentally friendly design
SMatte tin plated terminals ensure good solderability and connection integrity
Lightweight design of approximately 0.008 grams enhances efficiency in Compact devices
Liens connexes
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