DiodesZetex DMN67D7L N channel-Channel MOSFET, 210 mA, 60 V Enhancement, 3-Pin SOT-23 DMN67D7L-7
- N° de stock RS:
- 719-519
- Référence fabricant:
- DMN67D7L-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
0,32 €
(TVA exclue)
0,385 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 10 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,064 € | 0,32 € |
| 125 - 495 | 0,056 € | 0,28 € |
| 500 - 2495 | 0,04 € | 0,20 € |
| 2500 + | 0,036 € | 0,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-519
- Référence fabricant:
- DMN67D7L-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN67D7L | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 821pC | |
| Maximum Power Dissipation Pd | 570mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN67D7L | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 821pC | ||
Maximum Power Dissipation Pd 570mW | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET, designed specifically for power management applications. It effectively minimises on-state resistance, ensuring superior switching performance. This robust device is optimised for high-performance and energy-efficient designs, making it suitable for various applications including motor control. Its low gate threshold voltage and fast switching speed further enhance its versatility in a wide range of electronic projects.
Rated for a maximum drain-source voltage of 60V, ensuring reliable operation
Qualifies for high-temperature usage with a maximum body diode forward current of 500mA
Fast switching speed enhances circuit responsiveness
Complies fully with RoHS directives, supporting environmentally-friendly design
Moisture sensitivity level 1 ensures ease of handling during assembly
Designed for lead-free, halogen-free production, aligning with industry standards for green components
Liens connexes
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