STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- N° de stock RS:
- 719-464
- Référence fabricant:
- SCT012W90G3AG
- Fabricant:
- STMicroelectronics
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19,72 €
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23,86 €
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 19,72 € |
| 5 + | 19,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-464
- Référence fabricant:
- SCT012W90G3AG
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | Sct | |
| Package Type | HIP-247-3 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.8V | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series Sct | ||
Package Type HIP-247-3 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.8V | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247