STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- N° de stock RS:
- 719-464
- Référence fabricant:
- SCT012W90G3AG
- Fabricant:
- STMicroelectronics
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22,09 €
(TVA exclue)
26,73 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 22,09 € |
| 5 + | 21,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-464
- Référence fabricant:
- SCT012W90G3AG
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | HIP-247-3 | |
| Series | Sct | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.8V | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type HIP-247-3 | ||
Series Sct | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.8V | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Height 20.15mm | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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