DiodesZetex DMN63D8L N channel-Channel MOSFET, 400 mA, 30 V Enhancement, 3-Pin SOT-23 DMN63D8L-7
- N° de stock RS:
- 718-536
- Référence fabricant:
- DMN63D8L-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
0,26 €
(TVA exclue)
0,315 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,052 € | 0,26 € |
| 125 - 495 | 0,048 € | 0,24 € |
| 500 - 2495 | 0,044 € | 0,22 € |
| 2500 + | 0,036 € | 0,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 718-536
- Référence fabricant:
- DMN63D8L-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN63D8L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 520mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5mm | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN63D8L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 520mW | ||
Maximum Operating Temperature 150°C | ||
Width 2.5mm | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high-efficiency power management applications. This versatile component prioritises minimal on-state resistance while ensuring superior switching performance. Ideal for applications such as motor control, power management functions, and backlighting, this MOSFET offers a reliable and efficient solution to handle demanding power requirements. With a robust construction compliant with AEC-Q101 standards, it is also classified as a ’Green’ device, underscoring its environmentally friendly credentials. Its Compact SOT23 package facilitates space-efficient placements in various electronics.
Achieves Low on resistance, ensuring high efficiency in power management
Boasts low input capacitance for fast switching speeds, enhancing overall performance
Handles a maximum drain-source voltage of 30V, making it versatile for various applications
Offers continuous drain currents up to 350mA at 25°C, supporting reliable operation in demanding scenarios
Designed with ESD protection on the gate to safeguard the device and enhance longevity
Complies with RoHS and is free from lead, halogen, and antimony, supporting environmentally-friendly manufacturing
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